Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering
Applied Sciences | Free Full-Text | AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth
Center for Quantum Devices - Aluminum-Free InGaAsP/GaAs Lasers Emitting at 980 nm and 808 nm
Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)
950nm InGaAs Laser Diode Epitaxial Structure on GaAs Substrate
Room-temperature CW InGaAs 980nm laser diodes on on-axis silicon
Fotodiodo de la avalancha de OSI Laser Diode Introduces InGaAs - 4 Olsen Ave, Edison, NJ 08820, USA
Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers<xref ref-type="fn" rid="cpb142730fn1">*</xref>
Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide | Scientific Reports
What is InGaAs, or indium gallium arsenide? | Sensors Unlimited
Quantum Dot Laser
Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities
Indium gallium arsenide laser diode on exact germanium-on-silicon substrate
Comparative results of 980 nm InGaAs/GaAs and 1550 nm AlGaInAs/InP diode lasers - ScienceDirect
Quantum-dot lasers provide high performance near 1.15 microns
The schematic of InGaAs/GaAs laser structure, covered with SiO2, with... | Download Scientific Diagram
High Speed Amplified InGaAs Laser Photodetector AMPD-S | NEON
InGaAs quadrant pin receiver for laser spot tracking and optical communications offered by CMC Electronics | Military Aerospace
Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems | Scientific Reports
Axiom Optics laser beam profiler has use in lab and production settings | Laser Focus World
Influence of potential well thickness on the carrier transport characteristics of InGaAs quantum dot laser diodes - Physical Chemistry Chemical Physics (RSC Publishing)
Integrating indium gallium arsenide transistor and III-V laser on silicon
Schematic of (a) the structure of InGaAs double-QW lasers, and those of... | Download Scientific Diagram